Vacuum Cryostat's pressure dependent dark conductivity measurements on a-Si:H and a-SiN:H films

The electrical properties of a - Si:H and a - SiN:H films prepared by plasma deposition from SiH₄ + NH₃ gas mixtures have been investigated. We observed anomalous peaks in the temperature dependent dark conductivity curves of annealed a - Si:H and a - SiN:H samples when the temperatures were increased from 90 K to room temperature at a constant heating rate. To study the surface adsorption effect, vacuum cryostat pressure dependence of these peaks are investigated. We have also studied the effect of nitrogen on these observed peaks in dark conductivity.