Thermally stimulated current in layered semiconductor TlInS2 with incommensurate phase

S. Özdemir; R. A. Süleymanov; E. Civan; T. Firat

doi:10.1016/0038-1098(96)80010-X

Thermally stimulated current in layered semiconductor TlInS₂ with incommensurate phase

S. Özdemir
, R. A. Süleymanov
, E. Civan
, T. Firat

Hacettepe University

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

The thermally stimulated current (TSC) is studied in the temperature range between the commensurate phase (CP) and incommensurate phase (ICP) in layered semiconductor TlInS₂. It is shown that the successive thermocyclings between the CP and ICP lead to remarkable changes in the TSC spectrum. The changes in the TSC spectrum are explained in the framework of the model which is based on the interaction of modulation structure with the traps in TlInS₂. In order to obtain the straightforward information about this interaction, the trapping parameters are determined from the TSC curves before and after the successive thermocylings.

Original language	English
Pages (from-to)	385-390
Number of pages	6
Journal	Solid State Communications
Volume	98
Issue number	5
DOIs	https://doi.org/10.1016/0038-1098(96)80010-X
Publication status	Published - May 1996

Keywords

A. ferroelectrics
A. semiconductors
D. phase transitions

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10.1016/0038-1098(96)80010-X

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title = "Thermally stimulated current in layered semiconductor TlInS2 with incommensurate phase",

abstract = "The thermally stimulated current (TSC) is studied in the temperature range between the commensurate phase (CP) and incommensurate phase (ICP) in layered semiconductor TlInS2. It is shown that the successive thermocyclings between the CP and ICP lead to remarkable changes in the TSC spectrum. The changes in the TSC spectrum are explained in the framework of the model which is based on the interaction of modulation structure with the traps in TlInS2. In order to obtain the straightforward information about this interaction, the trapping parameters are determined from the TSC curves before and after the successive thermocylings.",

keywords = "A. ferroelectrics, A. semiconductors, D. phase transitions",

author = "S. {\"O}zdemir and S{\"u}leymanov, \{R. A.\} and E. Civan and T. Firat",

year = "1996",

month = may,

doi = "10.1016/0038-1098(96)80010-X",

language = "English",

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T1 - Thermally stimulated current in layered semiconductor TlInS2 with incommensurate phase

AU - Özdemir, S.

AU - Süleymanov, R. A.

AU - Civan, E.

AU - Firat, T.

PY - 1996/5

Y1 - 1996/5

N2 - The thermally stimulated current (TSC) is studied in the temperature range between the commensurate phase (CP) and incommensurate phase (ICP) in layered semiconductor TlInS2. It is shown that the successive thermocyclings between the CP and ICP lead to remarkable changes in the TSC spectrum. The changes in the TSC spectrum are explained in the framework of the model which is based on the interaction of modulation structure with the traps in TlInS2. In order to obtain the straightforward information about this interaction, the trapping parameters are determined from the TSC curves before and after the successive thermocylings.

AB - The thermally stimulated current (TSC) is studied in the temperature range between the commensurate phase (CP) and incommensurate phase (ICP) in layered semiconductor TlInS2. It is shown that the successive thermocyclings between the CP and ICP lead to remarkable changes in the TSC spectrum. The changes in the TSC spectrum are explained in the framework of the model which is based on the interaction of modulation structure with the traps in TlInS2. In order to obtain the straightforward information about this interaction, the trapping parameters are determined from the TSC curves before and after the successive thermocylings.

KW - A. ferroelectrics

KW - A. semiconductors

KW - D. phase transitions

UR - https://www.scopus.com/pages/publications/0030151901

U2 - 10.1016/0038-1098(96)80010-X

DO - 10.1016/0038-1098(96)80010-X

M3 - Article

AN - SCOPUS:0030151901

SN - 0038-1098

VL - 98

SP - 385

EP - 390

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Thermally stimulated current in layered semiconductor TlInS₂ with incommensurate phase

Abstract

Keywords

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