The temperature dependence of dark conductivity in hydrogenated amorphous SiNx films

H. Tolunay; I. Ay

The temperature dependence of dark conductivity in hydrogenated amorphous SiN_x films

H. Tolunay
, I. Ay

Ankara Chamber of Industry 1st Oiz Vocational School

Hacettepe University

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH₄ and NH₃. The dark conductivity (σ_d) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed in σ_d when the nitrogen content is increased.

Original language	English
Pages (from-to)	223-227
Number of pages	5
Journal	Turkish Journal of Physics
Volume	25
Issue number	3
Publication status	Published - 2001

Keywords

Activation energy
Dark Conductivity
Hydrogenated amorphous silicon nitride
Pre-exponential factor

Cite this

@article{2d284c21219c4a00ac9ba1b77252eb8f,

title = "The temperature dependence of dark conductivity in hydrogenated amorphous SiNx films",

abstract = "Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3. The dark conductivity (σd) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed in σd when the nitrogen content is increased.",

keywords = "Activation energy, Dark Conductivity, Hydrogenated amorphous silicon nitride, Pre-exponential factor",

author = "H. Tolunay and I. Ay",

year = "2001",

language = "English",

volume = "25",

pages = "223--227",

journal = "Turkish Journal of Physics",

issn = "1300-0101",

publisher = "TUBITAK",

number = "3",

}

TY - JOUR

T1 - The temperature dependence of dark conductivity in hydrogenated amorphous SiNx films

AU - Tolunay, H.

AU - Ay, I.

PY - 2001

Y1 - 2001

N2 - Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3. The dark conductivity (σd) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed in σd when the nitrogen content is increased.

AB - Thin film samples of hydrogenated amorphous silicon nitride with varying nitrogen content were prepared by conventional plasma deposition from a mixture of SiH4 and NH3. The dark conductivity (σd) of the films have been measured in the temperature range 420 K - 100 K. The conductivity is thermally activated with a single activation energy down to 250 K and conduction is dominated by electrons in extended states. A strong decrease is observed in σd when the nitrogen content is increased.

KW - Activation energy

KW - Dark Conductivity

KW - Hydrogenated amorphous silicon nitride

KW - Pre-exponential factor

UR - https://www.scopus.com/pages/publications/0035031990

M3 - Article

AN - SCOPUS:0035031990

SN - 1300-0101

VL - 25

SP - 223

EP - 227

JO - Turkish Journal of Physics

JF - Turkish Journal of Physics

IS - 3

ER -

The temperature dependence of dark conductivity in hydrogenated amorphous SiN_x films

Abstract

Keywords

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