Interfacial engineering of sot-mram to modulate atomic diffusion and enable pma stability >400 °c

Chong Bi; Shy Jay Lin; Xiang Li; Telem Simsek; M. Song; Wilman Tsai; Shan X. Wang

doi:10.1109/VLSI-TSA.2019.8804669

Interfacial engineering of sot-mram to modulate atomic diffusion and enable pma stability >400 °c

Chong Bi
, Shy Jay Lin
, Xiang Li
, Telem Simsek
, M. Song
, Wilman Tsai
, Shan X. Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We report our work on the optimization of W/CoFeB/MgO structures to fulfill perpendicular magnetic anisotropy (PMA) requirements in the production of SOT-MRAM. By optimizing the natural oxidization process of deposited Mg layer and introducing different dust layers at W/CoFeB and CoFeB/MgO interfaces, PMA of W/CoFeB/MgO structures can be enhanced by about 100%, which is much higher than that in Ta-based structures. The origin of this PMA enhancement was further confirmed by transmission electron microscopy investigations. The corresponding SOT switching efficiency and current-induced effective fields were also investigated.

Original language	English
Title of host publication	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728109428
DOIs	https://doi.org/10.1109/VLSI-TSA.2019.8804669
Publication status	Published - Apr 2019
Externally published	Yes
Event	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 - Hsinchu, Taiwan, Province of China Duration: 22 Apr 2019 → 25 Apr 2019

Publication series

Name	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019

Conference

Conference	2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019
Country/Territory	Taiwan, Province of China
City	Hsinchu
Period	22/04/19 → 25/04/19

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10.1109/VLSI-TSA.2019.8804669

Cite this

Bi, C., Lin, S. J., Li, X., Simsek, T., Song, M., Tsai, W., & Wang, S. X. (2019). Interfacial engineering of sot-mram to modulate atomic diffusion and enable pma stability >400 °c. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 Article 8804669 (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSI-TSA.2019.8804669

Bi, Chong ; Lin, Shy Jay ; Li, Xiang et al. / Interfacial engineering of sot-mram to modulate atomic diffusion and enable pma stability >400 °c. 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

@inproceedings{bf7993aeef7e4c21b692d65a9c3d761d,

title = "Interfacial engineering of sot-mram to modulate atomic diffusion and enable pma stability >400 °c",

abstract = "We report our work on the optimization of W/CoFeB/MgO structures to fulfill perpendicular magnetic anisotropy (PMA) requirements in the production of SOT-MRAM. By optimizing the natural oxidization process of deposited Mg layer and introducing different dust layers at W/CoFeB and CoFeB/MgO interfaces, PMA of W/CoFeB/MgO structures can be enhanced by about 100\%, which is much higher than that in Ta-based structures. The origin of this PMA enhancement was further confirmed by transmission electron microscopy investigations. The corresponding SOT switching efficiency and current-induced effective fields were also investigated.",

author = "Chong Bi and Lin, \{Shy Jay\} and Xiang Li and Telem Simsek and M. Song and Wilman Tsai and Wang, \{Shan X.\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019 ; Conference date: 22-04-2019 Through 25-04-2019",

year = "2019",

month = apr,

doi = "10.1109/VLSI-TSA.2019.8804669",

language = "English",

series = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019",

address = "United States",

}

Bi, C, Lin, SJ, Li, X, Simsek, T, Song, M, Tsai, W & Wang, SX 2019, Interfacial engineering of sot-mram to modulate atomic diffusion and enable pma stability >400 °c. in 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019., 8804669, 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Institute of Electrical and Electronics Engineers Inc., 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019, Hsinchu, Taiwan, Province of China, 22/04/19. https://doi.org/10.1109/VLSI-TSA.2019.8804669

Interfacial engineering of sot-mram to modulate atomic diffusion and enable pma stability >400 °c. / Bi, Chong; Lin, Shy Jay; Li, Xiang et al.
2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8804669 (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - We report our work on the optimization of W/CoFeB/MgO structures to fulfill perpendicular magnetic anisotropy (PMA) requirements in the production of SOT-MRAM. By optimizing the natural oxidization process of deposited Mg layer and introducing different dust layers at W/CoFeB and CoFeB/MgO interfaces, PMA of W/CoFeB/MgO structures can be enhanced by about 100%, which is much higher than that in Ta-based structures. The origin of this PMA enhancement was further confirmed by transmission electron microscopy investigations. The corresponding SOT switching efficiency and current-induced effective fields were also investigated.

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Bi C, Lin SJ, Li X, Simsek T, Song M, Tsai W et al. Interfacial engineering of sot-mram to modulate atomic diffusion and enable pma stability >400 °c. In 2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8804669. (2019 International Symposium on VLSI Technology, Systems and Application, VLSI-TSA 2019). doi: 10.1109/VLSI-TSA.2019.8804669

Interfacial engineering of sot-mram to modulate atomic diffusion and enable pma stability >400 °c

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