Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiN_x:H) based Schottky diodes

In this study, the Schottky diode characteristic of hydrogenated amorphous silicon nitride (a-SiN_x:H) samples containing various amounts of nitrogen have been investigated via both I-V and C-V measurements. From forward bias I-V measurements in the dark, the barrier height of samples (φ bo), ideality factor (η), modified Richardson constant (A) and series resistances (R_s) have been obtained as the function of temperature for different nitrogen content. In addition, forward and reverse bias current ratios (I _f/I_r) at V = 1 volt have been investigated as the function of temperature for different nitrogen content. Light sensitivity of the samples has also been investigated under different light intensities at room temperature. From the C-V measurements in the dark and at room temperatures, the dielectric constant of each samples have been obtained as a function of nitrogen content.