| Original language | Turkish |
|---|---|
| Pages (from-to) | 83-96 |
| Journal | Turkish Journal of Physics |
| Volume | 34 |
| Issue number | 2 |
| Publication status | Published - 2010 |
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Influence of the nitrogen concentration on the electrical characteristic of hydrogenated amorphous silicon nitride (a-SiNx :H) based Schottky diodes
- Hüseyin Tolunay
- , İlker Ay
Research output: Contribution to journal › Article › peer-review