Abstract
By using the molecular beam epitaxy growth technique, the impacts of growth temperatures for Bi2Te3 thin films were investigated, besides of the substrate temperatures on growth. Moreover, the full width half maximums, based on the X-ray photoemission spectroscopy measurements, have been shown clear results for Cr-Te bonds in chromium doped Bi2Te3 thin films. The current aim is a spotlight on enlightening how chromium is joined within Bi2Te3 epitaxial thin films in the process of doping concentration by providing detailed experimental evidences through the systematic structure and electronic investigations of the compound.
| Original language | English |
|---|---|
| Article number | 012085 |
| Journal | Journal of Physics: Conference Series |
| Volume | 1804 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2 Mar 2021 |
| Event | 2nd International Conference of Modern Applications on Information and Communication Technology, ICMAICT 2020 - Babylon-Hilla City, Iraq Duration: 22 Oct 2020 → 23 Oct 2020 |
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